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| LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V RDS(ON), Vgs@10V, Ids@25A =17.5m l l l l l l LIRFZ44N Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @T C = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 49 35 160 94 0.63 20 25 9.4 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 1.5 --- 62 Units C/W 1/8 LESHAN RADIO COMPANY, LTD. LIRFZ44N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. Typ. Max. Units Conditions 55 --- --- V VGS = 0V, I D = 250A --- 0.058 --- V/C Reference to 25C, ID = 1mA --- --- 17.5 m VGS = 10V, ID = 25A 2.0 --- 4.0 V VDS = VGS, ID = 250A 19 --- --- S VDS = 25V, ID = 25A --- --- 25 VDS = 55V, VGS = 0V A --- --- 250 VDS = 44V, VGS = 0V, TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 63 ID = 25A --- --- 14 nC VDS = 44V --- --- 23 VGS = 10V, See Fig. 6 and 13 --- 12 --- VDD = 28V --- 60 --- ID = 25A ns --- 44 --- RG = 12 --- 45 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- --- 6mm (0.25in.) nH G from package --- 7.5 --- and center of die contact --- 1470 --- VGS = 0V --- 360 --- VDS = 25V --- 88 --- pF = 1.0MHz, See Fig. 5 --- 530 150 mJ IAS = 25A, L = 0.47mH D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 49 --- --- showing the A G integral reverse --- --- 160 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25A, VGS = 0V --- 63 95 ns TJ = 25C, IF = 25A --- 170 260 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ISD 25A, di/dt 230A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 0.48mH RG = 25, I AS = 25A. (See Figure 12) Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . 2/8 LESHAN RADIO COMPANY, LTD. LIRFZ44N 1000 I D , Drain-to-Source Current (A) 100 I D, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 10 4.5V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 ID = 49A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C 2.0 100 1.5 1.0 10 0.5 1 4 5 6 7 V DS = 25V 20s PULSE WIDTH 8 9 10 11 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3/8 LESHAN RADIO COMPANY, LTD. LIRFZ44N 2500 VGS , Gate-to-Source Voltage (V) 2000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 25A VDS = 44V VDS = 27V VDS = 11V 16 C, Capacitance (pF) 1500 Ciss 12 1000 8 500 Coss Crss 4 0 1 10 100 0 0 10 20 30 40 50 60 70 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) ISD , Reverse Drain Current (A) 100 TJ = 175 C ID , Drain-to-Source Current (A) 100 10 10 100sec 1msec 1 Tc = 25C Tj = 175C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 10msec 1 TJ = 25 C 0.1 0.0 V GS = 0 V 0.6 1.2 1.8 2.4 0.1 100 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4/8 LESHAN RADIO COMPANY, LTD. LIRFZ44N 50 VDS 40 RD VGS RG D.U.T. + ID , Drain Current (A) -VDD 30 VGS 20 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5/8 LESHAN RADIO COMPANY, LTD. LIRFZ44N 1 5V 300 EAS , Single Pulse Avalanche Energy (mJ) TOP 240 VD S L D R IV E R BOTTOM ID 10A 18A 25A RG 20V D .U .T IA S tp 0 .01 + - VD D 180 A 120 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 60 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6/8 LESHAN RADIO COMPANY, LTD. LIRFZ44N Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - + RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [ VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel power MOSFETs 7/8 LESHAN RADIO COMPANY, LTD. LIRFZ44N 8/8 |
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